获奖情况：
1. 仪器仪表学会技术发明一等奖
2. 中国国际老员工创新大赛金奖（负责人）
3. 第三届全国博士后创新创业大赛创业组全国铜奖（负责人）
发明专利：
[1] 程厚义、赵巍胜、张博宇、姚宇暄、柳洋 靶头、磁控溅射靶枪及磁控溅射系统 ZL202111419111.2
[2] 程厚义、艾梅尔、李成、杜寅昌、赵巍胜、姚宇暄、许人友、汪建、王燕 薄膜沉积设备、物理气相沉积装置以及薄膜沉积方法 ZL202111283138.3
[3] 赵巍胜、程厚义、艾梅尔、张学莹 一种超薄多层膜的集成式加工设备及应用方法 ZL202010812789.6
[4] 程厚义，林怡萱 一种自旋逻辑器件、加法器和电子设备 ZL202610999786.5
[5] 程厚义，齐廉浩，李奕晗 一种基于机械臂的鲁棒性晶圆校准方法 ZL202511516904.4
代表性论文：
[1] He Y, Cheng H*, Zhang Y, et. al. Unconventional Phase Shift in Spin Hall Magnetoresistance of Antiferromagnetic Insulators[J]. ACS Applied Materials & Interfaces, 2026.(通讯作者)
[2] Qi L, Lin Y, Wang P, Cheng H*, et. al. A novel wafer pre-alignment algorithm achieving a balance between precision and robustness based on five-layer neural network and iterative reweighted least squares[J]. Measurement Science and Technology, 2025.(通讯作者)
[3] Cheng S, Cheng H*, Yao Y, et. al. Development of atomic-scale thin-film deposition system for perpendicular magnetic tunnel junctions with high tunneling magnetoresistance[J]. Review of Scientific Instruments, 2025, 96(10).(通讯作者)
[4] Xu S, Zhang Z, Mahfouzi, F, Huang, Y, Cheng, H, et. al. Spin-flop magnetoresistance in a collinear antiferromagnetic tunnel junction[J]. Nature Communications, 2025, 10.1038/s41467-025-62695-w.(共同一作)
[5] Xu R, Ning X, Cheng H, et. al. Terahertz generation via the inverse orbital Rashba-Edelstein effect at the Ni/Cu O x interface[J]. Physical Review Research, 2025, 7(1): L012042. (共同一作)
