获奖情况：
1. 北京市自然科学一等奖，2023（排名7/11）
2. 北京市优秀博士学位论文，2023
3. 北京市科技新星，2026
发明专利：
[1] W. Zhao, D. Zhu, Z. Guo, K. Cao, S. Peng Magnetic Random-Access Memory US11991933B2
[2] 赵巍胜, 朱道乾, 郭宗夏, 曹凯华, 彭守仲 磁性随机存储器 ZL 202011059916.6
代表性论文：
[1] D. Zhu#, Z. Guo#, A. Du#, D. Xiong, R. Xiao, W. Cai, K. Shi, S. Peng, K. Cao, S. Lu, D. Zhu, G. Wang, H. Liu, Q. Leng and W. Zhao, First demonstration of three terminal MRAM devices with immunity to magnetic fields and 10 ns field free switching by electrical manipulation of exchange bias, IEEE International Electron Devices Meeting (IEDM), 17.5.1-17.5.4 (2021).
[2] A. Du#, D. Zhu#, K. Cao#, Z. Zhang#, Z. Guo#, K. Shi, D. Xiong, R. Xiao, W. Cai, J. Yin, S. Lu, C. Zhang, Y. Zhang, S. Luo, A. Fert and W. Zhao, Electrical manipulation and detection of antiferromagnetism in magnetic tunnel junctions, Nature Electronics, 6, 425 (2023).
[3] D. Zhu#, J. Lu#, Y. Jiang#, Z. Zheng, D. Wang, C. Zhou, J. Zhou, S. Chen, Y. Gu, L. Liu, P. Yang, K. Shi, S. Peng, G. Xing, W. Zhao, and J. Chen, Observation of Anomalous Hall Effect in Collinear Antiferromagnet IrMn, Nano Letters, 25, 4307–4313 (2025).
[4] Y. Yao, C. Xiao, X. Ning, W. Cai, Xi. Guo, Z. Guo, K. Yang, D. Xiong, Z. Yan, D. Zhu, S. Lu, H. Zhang, S. Cheng, Y. Shao, R. Xu, D. Ma, C. Wang, Z. Wang, B. Zhang, X. Zheng, D. Zhu*, K. Cao, H. Liu, A. Manchon, A. Fert and W. Zhao, Giant orbital torque-driven picosecond switching in magnetic tunnel junctions, Science Bulletin (2026), doi: 10.1016/j.scib.2026.07.019.
[5] D. Zhu and W. Zhao, Threshold current density for perpendicular magnetization switching through spin-orbit torque, Physical Review Applied, 13, 044078 (2020).
