获奖情况：
1. 中国材料研究学会科学技术二等奖（第三）
发明专利：
[1] 杜奥; 史可文; 赵巍胜 磁性随机存储单元、写入方法及存储系统 CN202511034925.2
[2] 蔡文龙; 史可文; 赵巍胜 一种磁记录系统、磁序写入方法以及数据存储系统 CN202510233068.2
代表性论文：
[1] Jingyao Wang, Kewen Shi, Yuhao Jiang, Ying Sun, Sihao Deng, Jin Cui, Hongde Wang, Wenlong Cai, Daoqian Zhu, Guang Yang, Christoph Sürgers, Jiefeng Cao, Fangyuan Zhu, Yong Wang, Weisheng Zhao, Cong Wang. Discovery of Anomalous Hall Effect in a New Noncollinear Antiferromagnetic Phase[J]. Advanced Materials, 2026, 38(22): e21771.
[2] Zanhong Chen, Dehang Zhu, Ao Du, Yuzhang Shi, Wenlong Cai, Zixi Wang, Yuqi Duan, Shiyang Lu, Kaihua Cao, He Zhang, Deming Zhang, Hongxi Liu, Kewen Shi, Weisheng Zhao. Nanoscale exchange-bias magnetic tunnel junctions enabled memristive synapse and leaky-integrate-fire neuron for neuromorphic computing[J]. Nature Communications, 2026, 17(1): 4362.
[3] Zixi Wang, Yuqi Duan, Chengzhi Chen, Ao Du, Zanhong Chen, Shiyang Lu, Kaihua Cao, Kewen Shi, Wenlong Cai, Weisheng Zhao. Radiofrequency Spintronic Neural Network Enabled by Electrically Modulated Magnetic Tunnel Junctions[J]. Advanced Materials, 2025: e10319.
[4] Yue Bai, Wenlong Cai, Zanhong Chen, Daoqian Zhu, Shiyang Lu, Jiaxu Li, Ao Du, Kaihua Cao, Guang Yang, Hongxi Liu, Kewen Shi, Weisheng Zhao. Ru/IrMn Interfacial Orbital-to-Spin Conversion for Antiferromagnetic Switching in Magnetic Tunnel Junctions[J]. Nano Letters, 2025, 25(41): 14843-14849
[5] Ao Du, Weiran Xie, Tianxiao Nie, Shilei Ding, Kewen Shi, Xinran Wang, Mingxing Wu, Runyu Zhao, Renyou Xu, Daoqian Zhu, Jie Zhang, Pietro Gambardella, Weisheng Zhao. Subnanosecond Field‐Free Switching of a Wafer‐Scalable van der Waals Ferromagnet at Room Temperature[J]. Advanced Materials, 2025, 37(44): e05190.
