获奖情况：
1. 2025年入选IEEE Senior Member
2. 2024年入选山东省泰山学者青年专家
3. 2018年入选博士后创新人才支持计划
发明专利：
[1] 张德明; 罗丁一; 张凯丽; 陈思宇; 郭志鹏; 宋明阳; 王佑; 邓尔雅; 赵巍胜 一种快速写入的抗单粒子翻转SRAM单元电路 ZL202111519523.3
[2] 张德明; 王贤; 张凯丽; 赵巍胜 一种基于DICE抗单粒子翻转的磁存储器读电路 ZL202010910613.4
[3] 张德明; 王贤; 张凯丽; 赵巍胜 一种基于C单元抗单粒子双节点翻转的磁存储器读电路 ZL202010910583.7
[4] 张德明; 王贤; 张凯丽; 赵巍胜 一种基于DICE抗单粒子双节点翻转的磁存储器读电路 ZL202010910611.5
[5] 张德明; 曾琅; 赵巍胜; 陈建雄 一种写电路及存储器 ZL201510409776.3
代表性论文：
[1] Shengyuan Yan, Kaili Zhang, Lang Zeng, Bi Wang, Yue Zhang, Weisheng Zhao, Deming Zhang*, "A High-Reliability and High-Performance Nonvolatile Magnetic Radiation-Hardened Latch Based on Approximate C-Elements", in IEEE Transactions on Circuits and Systems I: Regular Papers, 2026.(集成电路领域顶级期刊)
[2] Deming Zhang, Jiaxin Yang, Dingyi Luo, Jianpeng Zhang, Lang Zeng, Bi Wang, Yue Zhang, Weisheng Zhao,"A 32 kb 55 nm Radiation-Hardened SRAM Chip With SEU 1.1 E-11 Upsets/Bit-Day, SEL >107.1 MeV cm²/mg, and TID >100 Krad(Si) for Space Applications", in IEEE Transactions on Circuits and Systems I: Regular Papers, 2025.(集成电路领域顶级期刊)
[3] Jiaxin Yang, Ziyang Guo, Shixuan Wang, Jilong Liu, Yue Zhang, Weisheng Zhao, Lang Zeng, Deming Zhang*, "A High-Speed, Low-Power, High-Reliability and Fully Single Event Double Node Upset Tolerant Design for Magnetic Random Access Memory", in IEEE Transactions on Circuits and Systems I: Regular Papers, 2025.(集成电路领域顶级期刊)
[4] Wentao Huang, Kaili Zhang, Junlin Wang, Yu Liu, Bolin Zhang, Youguang Zhang, Weisheng Zhao, Lang Zeng, Deming Zhang*, " A Novel P-bit Unit Based on VGSOT-MTJ for Reconfigurable Ising Machine With Fully Parallel Spin Updating Design", in IEEE Electron Device Letters, 2025.(电子器件领域顶级期刊)
[5] Kaili Zhang, Deming Zhang*, Mingyang Song, Zhipeng Guo, You Wang, Chengzhi Wang, Yue Zhang, Lang Zeng, "A Novel 9T1C-SRAM Compute-In-Memory Macro With Count-Less Pulse-Width Modulation Input and ADC-Less Charge-Integration-Count Output", in IEEE Transactions on Circuits and Systems I: Regular Papers, 2023.(集成电路领域顶级期刊)
