教育经历：
2010-2014 山东大学 物理学 本科
2015-2018 德累斯顿工业大学 电气工程 硕士研究生
2018-2024 德累斯顿工业大学 微电子 博士
工作经历：
2021-2025 德国SemiMod有限责任公司 联合创始人
2025至今 det365在线登录 副教授
SPICE模型（射频模型，低温模型），低温低噪放设计，AI赋能
代表性论文：
[1] JIN X, KUMAR P, SCHRÖTER M. On the emitter back-injection current in advanced SiGe HBTs at cryogenic temperatures[C]//2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS). Fort Lauderdale, FL, USA: IEEE, 2024: 274-277. DOI: 10.1109/BCICTS59662.2024.10745717.
[2] PENG B, JIN X, AUFINGER K, et al. A cryogenic 561 μW ultralow-power 56–62 GHz low noise amplifier in 130-nm SiGe HBTs[J]. IEEE Microwave and Wireless Technology Letters, 2024, 34(1): 61-64. DOI: 10.1109/LMWT.2023.3331310.
[3] JIN X, LIANG G, MÜLLER M, et al. Characterization and compact modeling of the thermal resistance of SiGe HBTs from cryogenic to room temperature[J]. IEEE Transactions on Electron Devices, 2023, 70(9): 4800-4807. DOI: 10.1109/TED.2023.3297564.
[4] SCHRÖTER M, JIN X. A physics-based analytical formulation for the tunneling current through the base of bipolar transistors operating at cryogenic temperatures[J]. IEEE Transactions on Electron Devices, 2023, 70(1): 247-253. DOI: 10.1109/TED.2022.3223885.
[5] JIN X, LIANG G, ZIMMERMANN Y, et al. Thermal impedance of SiGe HBTs: characterization and modeling[C]//2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS). IEEE, 2022: 1-4. DOI: 10.1109/BCICTS53451.2022.10051764.
