获奖情况：
1.2021中国电子学会科学技术奖自然科学一等奖（排名3/5）
2.2022华为奥林帕斯先锋奖（排名2/5）
3.2023北京市科学技术奖自然科学一等奖（排名5/11）
4.2021北京市高等公司产品成果奖二等奖（排名5/10）
5.2024中国国际老员工创新大赛优秀创新创业导师
发明专利：
[1] 王昭昊，王旻，史可文，赵巍胜 多比特磁性存储单元的制作方法及存储单元 ZL202310061173.3
[2] W. Zhao, Z. Wang, K. Cao, G. Wang. Magnetic random-access memory cell, memory and device US12029135B2
代表性论文：
[1] Z. Wang, et al. Demonstration of Spin Orbit Torque Multi-level Cell with Enhanced State Distinction. IEEE Electron Device Letters, 46(5): 749-752, 2025. (First author)
[2] C. Wang, et al. Variation Aware Evaluation Approach and Design Methodology for SOT-MRAM. IEEE Transactions on Circuits and Systems I: Regular Papers, 71(4): 1651-1664, 2024. (Corresponding author)
[3] H. Ye, et al. Critical current for field-free switching of the in-plane magnetization in the three-terminal magnetic tunnel junction. Science China Information Sciences, 68(10): 209404, 2025. (Corresponding author)
[4] M. Wang, et al. Temperature-Resilient Reconfigurable Physical Unclonable Function Driven by Pulse Modulation Using CMOS-Integrated Spintronic Chips. Advanced Science, 13(37): e76116, 2026. (Corresponding author)
[5] C. Jiang, et al. Demonstration of 128 Kb SOT-MRAM Chip with 5 ns Write and 15 ns Read Speed, High Endurance Over 10^10 and Low ECC-on Bit Error Rate. IEEE IEDM 2024. (Corresponding author)
