获奖情况：
1. 北京市科学技术奖自然科学一等奖
2. 中国电子学会科学技术奖自然科学一等奖
3. 华为奥林帕斯先锋奖
4. 北京市公司产品成果一等奖
5. 北京高校青年教师教学基本功比赛一等奖
发明专利：
[1] 赵巍胜，彭守仲，张有光 一种具有强垂直磁各向异性的多层膜 ZL201610239386.0
[2] 赵巍胜，赵晓璇，彭守仲 一种具有双间隔层并可形成铁磁或反铁磁耦合的多层膜 ZL201710565827.0
[3] 赵巍胜，彭守仲，康旺，张有光 一种具有强垂直磁各向异性的磁隧道结 ZL201711249373.2
[4] 赵巍胜，彭守仲，李伟祥，芦家琪 磁性随机存储单元及其数据写入方法 ZL202010218365.7
[5] Weisheng Zhao, Daoqian Zhu, Zongxia Guo, Kaihua Cao, Shouzhong Peng Magnetic Random-Access Memory US11991933B2
代表性论文：
[1] Peng S, Zhu D, Li W, Wu H, Grutter A, Gilbert D, Lu J, Xiong D, Cai W, Shafer P, Wang K, Zhao W*. Exchange bias switching in an antiferromagnet/ferromagnet bilayer driven by spin-orbit torque. Nature Electronics. 2020, 3(12): 757-764.
[2] Liu J, Liu J, Peng S*, Liu Z, Zhang Y, Qiao J, Wang S, Li W, Chen J, Wang Z, Li R, Zhang Y, Zhao W*. Antiferromagnetic materials: from fundamentals to applications. Matter. 2025, 8(11), 102472.
[3] Qiao J, Jiang Y, Hong B*, Wang Z, Liu J, Li J, Liu Z, Wang B, Wang S, Zhang Y, Zhao W, Peng S*. Enhanced damping-like torque through strain modulation in RuO2. Nano Letters. 2026, 26(17): 5873-5881.
[4] Liu J, Chen X, Lu J, Li W, Liu Z, Zhang Y, Bencok P, Steadman P, Liu W*, Zhao W*, Peng S*. Interfacial spin configurations and the microscopic origin of exchange bias at the IrMn/CoFeB interface. Fundamental Research. 2026.
[5] Peng S, Lu J, Li W, Wang L, Zhang H, Li X, Wang K, Zhao S. Field-free switching of perpendicular magnetization through voltage-gated spin-orbit torque. IEEE International Electron Devices Meeting (IEDM). 2019, 28.6.1-28.6.4.
