获奖情况：
1. det365在线登录教学成果奖特等奖 2025
2. det365在线登录研究生课程卓越教学奖 2022
3. det365在线登录“研究生十佳”指导教师 2017
4. 北京市高等公司产品成果奖（京师奖）一等奖 2025
5. 第七届全国老员工集成电路创新创业大赛全国总决赛第一名 2023
发明专利：
[1] 曾琅，徐小珺，赵巍胜 一种基于滤波器的自旋纳米振荡器同步方法 ZL202010804256.3
[2] 曾琅，高天琦，赵巍胜 自旋电子器件和存内逻辑计算器件 ZL201910705776
[3] 曾琅，张德明，赵巍胜 一种写电路及存储器 ZL201510409776
代表性论文：
[1] Keying Sun, Hao Li, Ning Ji, Zongwei Shang, Jiajun Qiu, Hongcheng Jiang, Zuoyuan Dong, Dong Zhang, Chaoming Wu, Ming Li, Lang Zeng*, Huixiong Deng, Xiao Gong, Runsheng Wang* , New Insights of Generalized Fatigue Effects in HfO2 and Hf0.5Zr0.5O2 Ferroelectric Capacitors: Polarization Conservation, Frequency Independence, Universal Degradation and Predictive Method, 2026 IEEE International Electron Devices Meeting (IEDM), 1-4, 2026, IEEE.
[2] Li, Hao; Sun, Keying; Zhang, Chen; Wang, Haoran; Liu, Yue-Yang; Shang, Zongwei; Li, Ming; Zeng, Lang* ; Deng, Huixiong* ; Wang, Runsheng*; New Insights into the Imprint Effects in Hf-based Ferroelectric Capacitors: Intrinsic Imprint, Universal De-Imprint, AC Enhanced Imprint, and Unified Modeling of Defect Dynamics, 2025 IEEE International Electron Devices Meeting (IEDM), 1-4, 2025, IEEE.
[3] Wang, Zirui; Wang, Haoran; Li, Wen-Feng; Wang, Yuxiao; Sun, Zixuan; Zhu, Anyi; Zeng, Lang* ; Liu, Yue-Yang* ; Wang, Runsheng*; Huang, Ru; Towards Understanding the Dynamic Variation in FinFET at Cryogenic Temperature: New Observations and Physical Modeling,2024 IEEE International Electron Devices Meeting (IEDM), 1-4, 2024, IEEE.
[4] Yin, Jialiang; Liu, Yu; Zhang, Bolin; Du, Ao; Gao, Tianqi; Ma, Xiangyue; Dong, Yi; Bai, Yue; Lu, Shiyang; Zhuo, Yudong; Zhao, Weisheng; Zeng, Lang; Scalable Ising Computer Based on Ultra-Fast Field-Free Spin Orbit Torque Stochastic Device with Extreme 1-Bit Quantization, 2022 International Electron Devices Meeting (IEDM), 36.1.1-36.1.4, 2022, IEEE.
[5] Zhang, Bolin; Liu, Yu; Gao, Tianqi; Zhang, Deming; Zhao, Weisheng; Zeng, Lang; Time Division Multiplexing Ising Computer Using Single Tunable True Random Number Generator Based on Spin Torque Nano-Oscillator, 2021 IEEE International Electron Devices Meeting (IEDM), 27.6.1-27.6.4, 2021, IEEE.
