获奖情况：
1. 2025年，国家级青年人才
2. 2022年，国际材料学会联盟，先进材料研究生奖
发明专利：
[1] 冷群文，曹志强，闫韶华，郭宗夏，郑臻益，赵巍胜 单、双轴磁场传感器及其制备方法 ZL 2018 1 0368797.9
代表性论文：
[1] Z. Zheng, L. Jia, Z. Zhang, Q. Shen, G. Zhou, Z. Cui, L. Ren, Z. Chen, N. Jamaludin, T. Zhao, R. Xiao, Q. Zhang, Y. Du, L. Liu, S. Gradecak, K. Novoselov, W. Zhao, X. Xu, Y. Zhang, J. Chen. All-electrical perpendicular switching of chiral antiferromagnetic order. Nature Materials, 24, 1407-1413, 2025
[2] Z. Zheng, Y. Zhang, V. Lopez-Dominguez, L. Sanchez-Tejerina, J. Shi, X. Feng, L. Chen, Z. Wang, Z. Zhang, K. Zhang, B. Hong, Y. Xu, Y. G. Zhang, M. Carpentieri, A. Fert, G. Finocchio, W. Zhao, P. K. Amiri. Field-free spin-orbit torque-induced magnetization switching in a ferrimagnetic layer with vertical composition gradient. Nature Communications, 12, 4555, 2021
[3] Z. Zheng, T. Zeng, T. Zhao, S. Shi, L. Ren, T. Zhang, L. Jia, Y. Gu, R. Xiao, H. Zhou, Q. Zhang, J. Lu, G. Wang, C. Zhao, B. K. Tay, J. Chen. Effective electrical manipulation of a topological antiferromagnet by orbital torques. Nature Communications, 15, 745, 2024
[4] X. Feng, Z. Zhang, Y. Xie, Z. Zheng* , et al. Field-free electrical switching of perpendicular magnetization via domain-wall-free textures in ferrimagnets. Physical Review Letters, 136, 126701, 2026.
[5] Z. Zheng, et al. Spin-orbit torque induced by switchable crystal inversion symmetry breaking. Advanced Materials, 0:e73219, 2026.
