获奖情况：
1. 国家科学技术进步奖 二等奖
2. 北京市科学技术奖（技术发明类）一等奖
3. 金砖国家青年创新奖二等奖
发明专利：
[1] 闫建昌，刘春岩，郭亚楠，崔志勇，王兵 紫外LED抗静电硅基板的封装结构 ZL201711453233.7
[2] 闫建昌，张亮，郭亚楠，吴清清，王军喜 一种垂直结构发光二极管芯片的制作方法 ZL201810726543.X
[3] 闫建昌，刘春岩，薛斌，郭亚楠，王军喜，李晋闽 紫外LED匀光装置及其应用 ZL201911093963.X
代表性论文：
[1] 155.P. Dong, J. Yan（通讯作者）, J. Wang, Y. Zhang, C. Geng, T. Wei, P. Cong, Y. Zhang, J. Zeng, Y. Tian, L. Sun, Q. Yan, J. Li, S. Fan, and Z. Qin, 282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates, Applied Physics Letters, volume: 102, issue: 24, pages: 241113, doi: 10.1063/1.4812237, (2013).
[2] Y. Tian, J. Yan（通讯作者）, Y. Zhang, X. Chen, Y. Guo, P. Cong, L. Sun, Q. Wang, E. Guo, X. Wei, J. Wang, and J. Li, Stimulated emission at 288 nm from silicon-doped AlGaN-based multiple-quantum-well laser, Optics express, volume: 23, issue: 9, pages: 11334-11340, doi: 10.1364/OE.23.011334, (2015).
[3] 136.J. Yan（通讯作者）, J. Wang, Y. Zhang, P. Cong, L. Sun, Y. Tian, C. Zhao, and J. Li, AlGaN-based deep-ultraviolet light-emitting diodes grown on High-quality AlN template using MOVPE, Journal of Crystal Growth, volume: 414, pages: 254-257, doi: 10.1016/j.jcrysgro.2014.10.015, (2015).
[4] Z. Li, L. Zhang, Y. Liu, C. Shao, Y. Gao, F. Fan, J. Wang, J. Li, J. Yan（通讯作者）, R. Li, and C. Li, Surface polarity-induced spatial charge separation boosting photocatalytic overall water splitting on GaN nanorod arrays, Angewandte Chemie-International Edition, volume:59, pages: 935-942, doi: 10.1002/anie.201912844, (2020)
[5] Zhang L, Guo YN, Wang JX, Li JM, Yan JC（通讯作者）, 3D Heterogeneous Integration of Silicon Nitride and Aluminum Nitride on Sapphire toward Ultrawideband Photonics Integrated Circuits, ACS PHOTONICS, Vol. 12, Issue 5, Pages:2538-2547, DOI: 10.1021/acsphotonics.4c02556, (2025)
